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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3P(H)IS package High voltage;high speed Wide area of safe operation APPLICATIONS For high voltage color display horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SC5802
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 1500 800 6 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae 10 30 60 150 -55~150
UNIT V V V A A W ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5802
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.5A
3.0
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.5A
1.5
V
ICES
Collector cut-off current
VCE=1400V; VBE=0
1.0
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
10
|I
A
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
48
hFE-2
tf
NDU ICO E SEM ANG INCH
DC current gain IC=6A ; VCE=5V 7 Fall time VCC=200V; IC=6A;IB1=1.2A IB2=-2.4A;RL =33.3|
TOR
0.1
10
0.3
|I
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5802
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm)
3


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